GROWTH AND STRUCTURE OF NONCRYSTALLINE SiO2 FILMS ON SILICON
نویسندگان
چکیده
Oxide thickness and oxidation time data related to thermal oxidation of silicon are interpreted by a model in which the oxygen transport through the noncrystalline oxide has two components: one is the usual random-walk diffusion dependent on thickness and the other one is independent of thickness. The latter one is attributed to transport through structural channels.
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